N-channel 600 V power MOSFET is designed for switching voltage regulator applications. It uses DTMOS IV technology with a single internal connection in a 3-pin TO-247 through-hole package measuring 15.94 mm by 20.95 mm by 5.02 mm. The device is rated for 20 A drain current, 165 W power dissipation, and ±30 V gate-source voltage. Maximum on-resistance is 155 mΩ at 10 V gate drive, with a 2.7 V to 3.7 V gate-threshold range and typical 48 nC total gate charge. RoHS-compatible product options are listed.
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| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Number of Elements | 1 |
| REACH | unknown |
| Military Spec | False |
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