N-channel power MOSFET uses DTMOSⅣ-H technology for switching voltage regulator applications. It is rated for 600 V drain-source voltage, 25 A drain current, and 180 W power dissipation. The through-hole TO-247-4L package has four pins and measures 15.94 mm by 20.95 mm by 5.0 mm. Electrical characteristics include 125 mΩ maximum on-resistance at 10 V gate drive, 2.5 V to 3.5 V gate-threshold range, and 40 nC typical total gate charge. RoHS-compatible product options are available, and the product is under full production.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Toshiba TK25Z60X datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Application scope | Switching voltage regulators |
| Polarity | N-channel |
| Generation | DTMOSⅣ-H |
| Internal connection | Single |
| Package | TO-247-4L |
| Mounting | Through Hole |
| Pins | 4 |
| Package width | 15.94mm |
| Package length | 20.95mm |
| Package height | 5.0mm |
| Drain-source voltage | 600V |
| Gate-source voltage | +/-30V |
| Drain current | 25A |
| Power dissipation | 180W |
| Gate threshold voltage, minimum | 2.5V |
| Gate threshold voltage, maximum | 3.5V |
| Drain-source on-resistance, maximum at |VGS|=10V | 125mΩ |
| Input capacitance, typical | 2400pF |
| Total gate charge, typical at VGS=10V | 40nC |
| Reverse recovery time, typical | 400ns |
| Reverse recovery charge, typical | 3300nC |
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Toshiba TK25Z60X to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
