N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 2A continuous drain current. This single-element silicon transistor is housed in a 3-pin New PW-Mold surface-mount package with a tab. Key specifications include a maximum gate-source voltage of ±30V, 4300mΩ maximum drain-source resistance at 10V, and a maximum power dissipation of 60000mW. Operating temperature range is -55°C to 150°C.
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Toshiba TK2P60D(TE16R1,NQ) technical specifications.
| Package/Case | New PW-Mold |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.4 |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 2A |
| Material | Si |
| Maximum Drain Source Resistance | 4300@10VmOhm |
| Typical Gate Charge @ Vgs | 7@10VnC |
| Typical Gate Charge @ 10V | 7nC |
| Typical Input Capacitance @ Vds | 280@25VpF |
| Maximum Power Dissipation | 60000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
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