N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 2A continuous drain current. This single-element silicon transistor is housed in a 3-pin New PW-Mold surface-mount package with a tab. Key specifications include a maximum gate-source voltage of ±30V, 4300mΩ maximum drain-source resistance at 10V, and a maximum power dissipation of 60000mW. Operating temperature range is -55°C to 150°C.
PackageNew PW-Mold
MountingSurface Mount
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Technical Specifications
Toshiba TK2P60D(TE16R1,NQ) technical specifications.
General
Package/Case
New PW-Mold
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
5.5
Package Height (mm)
2.3
Seated Plane Height (mm)
2.4
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
2A
Material
Si
Maximum Drain Source Resistance
4300@10VmOhm
Typical Gate Charge @ Vgs
7@10VnC
Typical Gate Charge @ 10V
7nC
Typical Input Capacitance @ Vds
280@25VpF
Maximum Power Dissipation
60000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba TK2P60D(TE16R1,NQ) Datasheet
Download the complete datasheet for Toshiba TK2P60D(TE16R1,NQ) to view detailed technical specifications.
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