N-channel power MOSFET featuring 600V drain-source voltage and 30.8A continuous drain current. Offers a low on-resistance of 0.098 ohms. This discrete semiconductor component has one element and four terminals, with a single terminal position.
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Technical Specifications
Toshiba TK31V60X,LQ technical specifications.
General
| Number of Terminals | 4 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Toshiba TK31V60X,LQ Datasheet
Download the complete datasheet for Toshiba TK31V60X,LQ to view detailed technical specifications.
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