TK40A06N1

N-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 60A continuous drain current. This single-element silicon transistor utilizes U-MOS VII-H process technology and is housed in a TO-220SIS package with 3 pins and a tab, suitable for through-hole mounting. Key electrical characteristics include a ±20V gate-source voltage, 4V gate threshold voltage, and low 10.4mΩ drain-source resistance at 10V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 30,000mW.