TK40P04M1(T6RSS-Q)

40V 40A N-CH MOSFET, 10.3mR Rds On, TO-252

N-channel MOSFET, 40V drain-source voltage, 40A continuous drain current. Features low 10.3mR drain-to-source resistance and 47W max power dissipation. Operates from -55°C to 150°C, with fast switching times including 18ns fall time, 27ns turn-on delay, and 63ns turn-off delay. Packaged in TO-252-3 for surface mount applications.

PackageTO-252-3

MountingSurface Mount, Through Hole

PolarityN-CHANNEL

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Technical Specifications

Toshiba TK40P04M1(T6RSS-Q) technical specifications.

General

Package/Case	TO-252-3
Continuous Drain Current (ID)	40A
Drain to Source Resistance	10.3mR
Drain to Source Voltage (Vdss)	40V
Fall Time	18ns
Gate to Source Voltage (Vgs)	20V
Height	2.3mm
Input Capacitance	1.92nF
Length	10mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	47W
Mount	Surface Mount, Through Hole
Number of Channels	1
Package Quantity	2000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Radiation Hardening	No
Rds On Max	11mR
RoHS Compliant	No
Series	U-MOSVI-H
Turn-Off Delay Time	63ns
Turn-On Delay Time	27ns
Width	6.1mm