N-channel enhancement mode power MOSFET, 60V drain-source voltage, 45A continuous drain current. Features 10.5mΩ maximum drain-source resistance at 10V Vgs, 3V gate threshold voltage, and 41nC typical gate charge. Surface mount DPAK+ package (TO-252) with gull-wing leads, 3 pins, and a tab. Constructed with silicon and U-MOS IV process technology, operating from -55°C to 175°C.
PackageDPAK+
MountingSurface Mount
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Technical Specifications
Toshiba TK45S06K3L technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
DPAK+
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
5.5
Package Height (mm)
2.3
Seated Plane Height (mm)
2.4
Pin Pitch (mm)
2.3
Package Weight (g)
0.36
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
U-MOS IV
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
45A
Material
Si
Maximum Gate Threshold Voltage
3V
Maximum Drain Source Resistance
10.5@10VmOhm
Typical Gate Charge @ Vgs
41@10VnC
Typical Gate Charge @ 10V
41nC
Typical Input Capacitance @ Vds
1950@10VpF
Maximum Power Dissipation
68000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU
Datasheet
Toshiba TK45S06K3L Datasheet
Download the complete datasheet for Toshiba TK45S06K3L to view detailed technical specifications.
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