The TK4A60DA(Q,M) is a MOSFET from Toshiba with a maximum drain to source voltage of 600V and continuous drain current of 3.5A. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 35W. The device is packaged in a SC package and is available in a through hole mount configuration.
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Toshiba TK4A60DA(Q,M) technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Packaging | Tray |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Threshold Voltage | 2.4V |
| RoHS | Compliant |
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