N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 4A continuous drain current. This single-element silicon transistor utilizes pi-MOS VII process technology and is housed in a 3-pin DPAK (TO-252) surface-mount package with gull-wing leads. Key specifications include a maximum drain-source resistance of 1700 mOhm at 10V and a typical gate charge of 12 nC at 10V. The plastic package measures 6.5mm x 5.5mm x 2.3mm, suitable for PCB mounting.
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Toshiba TK4P60D technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.4 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | pi-MOS VII |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 4A |
| Material | Si |
| Maximum Gate Threshold Voltage | 4.4V |
| Maximum Drain Source Resistance | 1700@10VmOhm |
| Typical Gate Charge @ Vgs | 12@10VnC |
| Typical Gate Charge @ 10V | 12nC |
| Typical Input Capacitance @ Vds | 600@25VpF |
| Maximum Power Dissipation | 100000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
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