The TK4P60DA(T6RSS-Q) is a 600V p-MOSFET from Toshiba with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3.5A and a maximum power dissipation of 80W. The device is packaged in a TO-252-3 surface mount package and is lead free. It has an input capacitance of 490pF and a maximum Rds on resistance of 2.2R.
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| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 490pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 2.2R |
| Series | p-MOSVII |
| RoHS | Compliant |
Download the complete datasheet for Toshiba TK4P60DA(T6RSS-Q) to view detailed technical specifications.
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