The Toshiba TK4P60DB(T6RSS-Q) is a surface mount p-MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 80W and a maximum drain to source voltage of 600V. The device features a continuous drain current of 3.7A and a maximum Rds on resistance of 2 ohms. It is packaged in a TO-252-3 package and is lead free. The TK4P60DB(T6RSS-Q) is suitable for use in a variety of applications including power management and switching circuits.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Toshiba TK4P60DB(T6RSS-Q) technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 540pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Series | p-MOSVII |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK4P60DB(T6RSS-Q) Datasheet
Download the complete datasheet for Toshiba TK4P60DB(T6RSS-Q) to view detailed technical specifications.
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