N-channel enhancement mode power MOSFET, 40V drain-source voltage, 50A continuous drain current. Features U-MOS IV process technology, 5.4mΩ maximum drain-source on-resistance at 10V Vgs. Surface mountable in a 3-pin DPAK+ (TO-252) package with gull-wing leads. Operating temperature range from -55°C to 175°C.
PackageDPAK+
MountingSurface Mount
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Technical Specifications
Toshiba TK50S04K3L technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
DPAK+
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
5.5
Package Height (mm)
2.3
Seated Plane Height (mm)
2.4
Pin Pitch (mm)
2.3
Package Weight (g)
0.36
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
U-MOS IV
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
50A
Material
Si
Maximum Gate Threshold Voltage
3V
Maximum Drain Source Resistance
5.4@10VmOhm
Typical Gate Charge @ Vgs
42@10VnC
Typical Gate Charge @ 10V
42nC
Typical Input Capacitance @ Vds
2010@10VpF
Maximum Power Dissipation
68000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU
Datasheet
Toshiba TK50S04K3L Datasheet
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