The Toshiba TK5Q60W,S1VQ is a N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 60W and a continuous drain current of 5.4A. The device is packaged in a TO-251-3 case and is mounted through a hole. The MOSFET has a drain to source voltage of 600V and a drain to source resistance of 770mR. It also features a gate to source voltage of 30V and an input capacitance of 380pF.
PackageTO-251-3
Resistance0.9R
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Toshiba TK5Q60W,S1VQ technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Resistance | 770mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 380pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 900mR |
| Resistance | 0.9R |
| Series | DTMOSIV |
| Turn-Off Delay Time | 50ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK5Q60W,S1VQ Datasheet
Download the complete datasheet for Toshiba TK5Q60W,S1VQ to view detailed technical specifications.
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