TK6A65D(STA4,Q)

N-channel Power MOSFET featuring 650V drain-source voltage and 6A continuous drain current. This single-element silicon transistor utilizes pi-MOS VII process technology and is housed in a 3-pin TO-220SIS through-hole package with a tab. Key specifications include a maximum gate-source voltage of ±30V, a typical gate threshold voltage of 4V, and a maximum drain-source on-resistance of 1110 mOhm at 10V. Maximum power dissipation is 45000 mW, with an operating temperature range of -55°C to 150°C.