This silicon N-channel power MOSFET uses Toshiba's U-MOSⅨ-H process and is intended for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers. It is rated for 60 V drain-source voltage and is housed in a 3-pin DPAK surface-mount package measuring 6.6 × 10.0 × 2.3 mm. The device provides low on-resistance of 6.7 mΩ maximum at VGS = 10 V and 11.1 mΩ maximum at VGS = 4.5 V, with typical total gate charge of 26 nC and output charge of 23 nC. Absolute maximum ratings include 74 A drain current, 66 W power dissipation, and channel and storage temperature capability up to 175 °C, with commercial production starting in April 2017.
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| Channel Type | N-channel |
| Applications | High-efficiency DC-DC converters / switching voltage regulators / motor drivers |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (Tc=25°C) | 74A |
| Pulsed Drain Current | 190A |
| Power Dissipation | 66W |
| Drain-Source On-Resistance Max (VGS=10V) | 6.7mΩ |
| Drain-Source On-Resistance Max (VGS=4.5V) | 11.1mΩ |
| Gate Threshold Voltage | 1.5 to 2.5V |
| Input Capacitance Typ | 1990pF |
| Output Capacitance Typ | 350pF |
| Reverse Transfer Capacitance Typ | 45pF |
| Total Gate Charge Typ | 26nC |
| Output Charge Typ | 23nC |
| Reverse Recovery Time Typ | 31ns |
| Reverse Recovery Charge Typ | 25nC |
| Channel-to-Case Thermal Resistance Max | 2.24°C/W |
| Storage Temperature Range | -55 to 175°C |
| Package Dimensions | 6.6 × 10.0 × 2.3mm |
| REACH | unknown |
| Military Spec | False |
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