N-channel enhancement mode power MOSFET, 40V drain-source voltage, 70A continuous drain current. Features U-MOS IV process technology, TO-3PN package with 3 pins and tab, suitable for through-hole mounting. Offers low drain-source on-resistance of 4.1 mOhm at 10V, with a maximum power dissipation of 125W. Operates across a wide temperature range from -55°C to 175°C.
PackageTO-3PN
MountingThrough Hole
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Technical Specifications
Toshiba TK70J04K3Z technical specifications.
General
| Package/Case | TO-3PN |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.5 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 19 |
| Seated Plane Height (mm) | 22.7(Max) |
| Package Weight (g) | 4.6 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | U-MOS IV |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 70A |
| Material | Si |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 4.1@10VmOhm |
| Typical Gate Charge @ Vgs | 100@10VnC |
| Typical Gate Charge @ 10V | 100nC |
| Typical Input Capacitance @ Vds | 4500@10VpF |
| Maximum Power Dissipation | 125000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU |
Datasheet
Toshiba TK70J04K3Z Datasheet
Download the complete datasheet for Toshiba TK70J04K3Z to view detailed technical specifications.
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