The TK9J90E,S1E(S MOSFET has a continuous drain current of 9A and a power dissipation of 250W. It can operate at temperatures between -55°C and 150°C. The device has a fall time of 35ns and turn-on and turn-off delay times of 80ns and 140ns, respectively. It is available in a through-hole package.
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Toshiba TK9J90E,S1E(S technical specifications.
| Continuous Drain Current (ID) | 9A |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 250W |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 80ns |
| RoHS | Compliant |
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