The TLP521-1A is a single power darlington transistor from Toshiba with a collector emitter saturation voltage of 400mV and a collector emitter voltage of 55V. It can handle a forward current of 70mA and has a current transfer ratio of 600%. The device is packaged in a PDIP case and is suitable for through hole mounting. The TLP521-1A operates within a temperature range of -25°C to 85°C and has a power dissipation of 250mW.
PackagePDIP
MountingThrough Hole
Power250mW
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Technical Specifications
Toshiba TLP521-1A technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 55V |
| Current Transfer Ratio | 600% |
| Forward Current | 70mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 250mW |
| Reverse Breakdown Voltage | 5V |
Compliance
| RoHS | Not Compliant |
Datasheet
Toshiba TLP521-1A Datasheet
Download the complete datasheet for Toshiba TLP521-1A to view detailed technical specifications.
No datasheet is available for this part.