The TPC6108 is a P-channel MOSFET with a continuous drain current of 4.5A and a drain to source breakdown voltage of -30V. It features a drain to source resistance of 60mR and a power dissipation of 2.2W. The device is packaged in a SOT-23-6 surface mount package and is suitable for use in a variety of applications. The operating temperature range is not specified, but the device is likely suitable for use in most general-purpose electronic circuits.
PackageSOT-23-6
MountingSurface Mount
PolarityP-CHANNEL
Power2.2W
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Technical Specifications
Toshiba TPC6108(TE85L,F,M) technical specifications.
General
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 570pF |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.2W |
| Rds On Max | 60mR |
Compliance
| RoHS | Not Compliant |
Datasheet
Toshiba TPC6108(TE85L,F,M) Datasheet
Download the complete datasheet for Toshiba TPC6108(TE85L,F,M) to view detailed technical specifications.
No datasheet is available for this part.