N-channel enhancement mode power MOSFET, dual configuration, fabricated on silicon. Features a maximum drain-source voltage of 30V and a continuous drain current of 2.5A. Housed in a 6-pin VS (SOT) surface-mount package with dimensions of 2.9mm (L) x 1.6mm (W) x 0.7mm (H). Offers a maximum drain-source on-resistance of 95mΩ at 10V Vgs and a typical gate charge of 4.7nC at 10V Vgs. Maximum power dissipation is 900mW, with an operating temperature range of -55°C to 150°C.
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| Package Family Name | SOT |
| Package/Case | VS |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 0.7 |
| Seated Plane Height (mm) | 0.75 |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 2.5A |
| Material | Si |
| Maximum Drain Source Resistance | 95@10VmOhm |
| Typical Gate Charge @ Vgs | 4.7@10VnC |
| Typical Gate Charge @ 10V | 4.7nC |
| Typical Input Capacitance @ Vds | 170@10VpF |
| Maximum Power Dissipation | 900mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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