N-channel enhancement mode Power MOSFET, 30V drain-source voltage, 11A continuous drain current. Features 16mΩ maximum drain-source on-resistance at 10V Vgs. Surface mountable in an 8-pin 2-6J1B plastic package with 1.27mm pin pitch. Single Quad Drain Triple Source configuration, 2400mW maximum power dissipation, operating temperature range of -55°C to 150°C.
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Toshiba TPC8005-H(T2LIBM) technical specifications.
| Package/Case | 2-6J1B |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.5(Max) |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 1.5 |
| Seated Plane Height (mm) | 1.6 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 11A |
| Material | Si |
| Maximum Drain Source Resistance | 16@10VmOhm |
| Typical Gate Charge @ Vgs | 20@10VnC |
| Typical Gate Charge @ 10V | 20nC |
| Typical Input Capacitance @ Vds | 1150@10VpF |
| Maximum Power Dissipation | 2400mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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