N-channel enhancement mode Power MOSFET, 30V drain-source voltage, 11A continuous drain current. Features 16mΩ maximum drain-source on-resistance at 10V Vgs. Surface mountable in an 8-pin 2-6J1B plastic package with 1.27mm pin pitch. Single Quad Drain Triple Source configuration, 2400mW maximum power dissipation, operating temperature range of -55°C to 150°C.
Package2-6J1B
MountingSurface Mount
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Technical Specifications
Toshiba TPC8005-H(T2LIBM) technical specifications.
General
Package/Case
2-6J1B
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
11A
Material
Si
Maximum Drain Source Resistance
16@10VmOhm
Typical Gate Charge @ Vgs
20@10VnC
Typical Gate Charge @ 10V
20nC
Typical Input Capacitance @ Vds
1150@10VpF
Maximum Power Dissipation
2400mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba TPC8005-H(T2LIBM) Datasheet
Download the complete datasheet for Toshiba TPC8005-H(T2LIBM) to view detailed technical specifications.
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