N-channel enhancement mode Power MOSFET, 30V drain-source voltage, 13A continuous drain current. Features U-MOS II process technology, 10mΩ maximum drain-source resistance at 10V, and 44nC typical gate charge. Packaged in an 8-pin 2-6J1B surface-mount plastic case with dimensions of 5.5mm (max) length, 4.4mm width, and 1.5mm height. Operates from -55°C to 150°C with a maximum power dissipation of 2400mW.
Package2-6J1B
MountingSurface Mount
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Technical Specifications
Toshiba TPC8007-H(T2LLUCE) technical specifications.
General
Package/Case
2-6J1B
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
U-MOS II
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
13A
Material
Si
Maximum Drain Source Resistance
10@10VmOhm
Typical Gate Charge @ Vgs
44@10VnC
Typical Gate Charge @ 10V
44nC
Typical Input Capacitance @ Vds
2040@10VpF
Maximum Power Dissipation
2400mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba TPC8007-H(T2LLUCE) Datasheet
Download the complete datasheet for Toshiba TPC8007-H(T2LLUCE) to view detailed technical specifications.
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