N-channel enhancement mode silicon power MOSFET featuring a 30V drain-source voltage and 11A continuous drain current. This surface-mount transistor is housed in an 8-pin SOP package with gull-wing leads, measuring 5.5mm x 4.4mm x 1.5mm. It offers a low drain-source on-resistance of 14mΩ at 10V Vgs and a typical gate charge of 39nC. Maximum power dissipation is 1900mW, with an operating temperature range of -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8014(T2LIBM1) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
11A
Material
Si
Maximum Drain Source Resistance
14@10VmOhm
Typical Gate Charge @ Vgs
39@10VnC
Typical Gate Charge @ 10V
39nC
Typical Input Capacitance @ Vds
1860@10VpF
Maximum Power Dissipation
1900mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba TPC8014(T2LIBM1) Datasheet
Download the complete datasheet for Toshiba TPC8014(T2LIBM1) to view detailed technical specifications.
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