N-channel enhancement mode power MOSFET, featuring a 30V drain-source voltage and 13A continuous drain current. This surface-mount component is housed in an 8-pin SOP package with gull-wing leads, measuring 5.5mm in length and 4.4mm in width. Key electrical characteristics include a low drain-source on-resistance of 9mΩ at 10V, with typical gate charge values of 13nC at 5V and 23nC at 10V. Maximum power dissipation is rated at 1900mW, operating across a temperature range of -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8020-H(T2LIBM2) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
13A
Material
Si
Maximum Drain Source Resistance
9@10VmOhm
Typical Gate Charge @ Vgs
13@5V|23@10VnC
Typical Gate Charge @ 10V
23nC
Typical Input Capacitance @ Vds
1395@10VpF
Maximum Power Dissipation
1900mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba TPC8020-H(T2LIBM2) Datasheet
Download the complete datasheet for Toshiba TPC8020-H(T2LIBM2) to view detailed technical specifications.
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