The TPC8020-H(TE12L,Q) is a surface-mount N-channel MOSFET with a continuous drain current of 13A and a drain to source breakdown voltage of 30V. It features a drain to source resistance of 9mR and a power dissipation of 1.9W. The device is packaged in a SOP package and is suitable for surface mount applications. The operating temperature range is from -55°C to a minimum unspecified temperature.
PackageSOP
MountingSurface Mount
PolarityN-CHANNEL
Power1.9W
Quick Jump:
Technical Specifications
Toshiba TPC8020-H(TE12L,Q) technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 68ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.395nF |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.9W |
| Rds On Max | 9mR |
| Turn-Off Delay Time | 64ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Toshiba TPC8020-H(TE12L,Q) Datasheet
Download the complete datasheet for Toshiba TPC8020-H(TE12L,Q) to view detailed technical specifications.
No datasheet is available for this part.
Product Images
