N-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 11A continuous drain current. This single element silicon transistor is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads for surface mounting. Key specifications include a maximum drain-source on-resistance of 14.5 mOhm at 10V, a typical gate charge of 41nC at 10V, and a typical input capacitance of 2590pF at 10V. Operating temperature range is -55°C to 150°C.
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Toshiba TPC8050-H(TE12L,V) technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOP |
| Package Description | Plastic Small Outline Package |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.5(Max) |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 1.5 |
| Seated Plane Height (mm) | 1.6 |
| Pin Pitch (mm) | 1.27 |
| Package Weight (g) | 0.08 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 11A |
| Material | Si |
| Maximum Gate Threshold Voltage | 2.3V |
| Maximum Drain Source Resistance | 14.5@10VmOhm |
| Typical Gate Charge @ Vgs | 41@10V|21@5VnC |
| Typical Gate Charge @ 10V | 41nC |
| Typical Input Capacitance @ Vds | 2590@10VpF |
| Maximum Power Dissipation | 1900mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
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