N-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 11A continuous drain current. This single element silicon transistor is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads for surface mounting. Key specifications include a maximum drain-source on-resistance of 14.5 mOhm at 10V, a typical gate charge of 41nC at 10V, and a typical input capacitance of 2590pF at 10V. Operating temperature range is -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8050-H(TE12L,V) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Weight (g)
0.08
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
11A
Material
Si
Maximum Gate Threshold Voltage
2.3V
Maximum Drain Source Resistance
14.5@10VmOhm
Typical Gate Charge @ Vgs
41@10V|21@5VnC
Typical Gate Charge @ 10V
41nC
Typical Input Capacitance @ Vds
2590@10VpF
Maximum Power Dissipation
1900mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Datasheet
Toshiba TPC8050-H(TE12L,V) Datasheet
Download the complete datasheet for Toshiba TPC8050-H(TE12L,V) to view detailed technical specifications.
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