P-channel enhancement mode power MOSFET, surface mount, 8-pin package (2-6J1A) with 1.27mm pin pitch. Features 30V drain-source voltage, 6A continuous drain current, and 40mOhm maximum drain-source resistance at 10V. Offers typical gate charge of 43nC and input capacitance of 1380pF at 10V. Maximum power dissipation is 2400mW, operating temperature range from -55°C to 150°C. Single quad drain triple source configuration.
Package2-6J1A
MountingSurface Mount
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Technical Specifications
Toshiba TPC8102(T2LASAW) technical specifications.
General
Package/Case
2-6J1A
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Pin Pitch (mm)
1.27
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
6A
Material
Si
Maximum Drain Source Resistance
40@10VmOhm
Typical Gate Charge @ Vgs
43@10VnC
Typical Gate Charge @ 10V
43nC
Typical Input Capacitance @ Vds
1380@10VpF
Maximum Power Dissipation
2400mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba TPC8102(T2LASAW) Datasheet
Download the complete datasheet for Toshiba TPC8102(T2LASAW) to view detailed technical specifications.
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