P-channel enhancement mode power MOSFET, surface mount, 8-pin package (2-6J1A) with 1.27mm pin pitch. Features 30V drain-source voltage, 6A continuous drain current, and 40mOhm maximum drain-source resistance at 10V. Offers typical gate charge of 43nC and input capacitance of 1380pF at 10V. Maximum power dissipation is 2400mW, operating temperature range from -55°C to 150°C. Single quad drain triple source configuration.
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Toshiba TPC8102(T2LASAW) technical specifications.
| Package/Case | 2-6J1A |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.5(Max) |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 1.5 |
| Pin Pitch (mm) | 1.27 |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 6A |
| Material | Si |
| Maximum Drain Source Resistance | 40@10VmOhm |
| Typical Gate Charge @ Vgs | 43@10VnC |
| Typical Gate Charge @ 10V | 43nC |
| Typical Input Capacitance @ Vds | 1380@10VpF |
| Maximum Power Dissipation | 2400mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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