Toshiba
TPC8111(TE12L,Q,M)
TRANSISTOR 11000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, 2-6J1B, 8 PIN, FET General Purpose Small Signal
PackageSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.9W
Quick Jump:
Technical Specifications
Toshiba TPC8111(TE12L,Q,M) technical specifications.
General
Package/Case
SOP
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
12mR
Drain to Source Voltage (Vdss)
30V
Fall Time
109ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.71nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.9W
Radiation Hardening
No
Rds On Max
12mR
RoHS Compliant
No
Compliance
RoHS
Not CompliantNo
Datasheet
Toshiba TPC8111(TE12L,Q,M) Datasheet
Download the complete datasheet for Toshiba TPC8111(TE12L,Q,M) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.