P-channel enhancement mode power MOSFET, silicon, featuring 30V drain-source voltage and 10A continuous drain current. This surface-mount transistor is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads, measuring 4.9mm x 3.9mm x 1.52mm. It offers a low drain-source on-resistance of 13mΩ at 10V and a typical gate charge of 64nC at 10V. Maximum power dissipation is 1900mW, with an operating temperature range of -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8125 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOP |
| Package Description | Plastic Small Outline Package |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 3.9 |
| Package Height (mm) | 1.52 |
| Seated Plane Height (mm) | 1.68 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | MS-012AA |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | 30V |
| Maximum Continuous Drain Current | 10A |
| Material | Si |
| Maximum Drain Source Resistance | 13@10VmOhm |
| Typical Gate Charge @ Vgs | 64@10VnC |
| Typical Gate Charge @ 10V | 64nC |
| Typical Input Capacitance @ Vds | 2580@10VpF |
| Maximum Power Dissipation | 1900mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Toshiba TPC8125 Datasheet
Download the complete datasheet for Toshiba TPC8125 to view detailed technical specifications.
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