P-channel enhancement mode power MOSFET, silicon, featuring 30V drain-source voltage and 10A continuous drain current. This surface-mount transistor is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads, measuring 4.9mm x 3.9mm x 1.52mm. It offers a low drain-source on-resistance of 13mΩ at 10V and a typical gate charge of 64nC at 10V. Maximum power dissipation is 1900mW, with an operating temperature range of -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8125 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
4.9
Package Width (mm)
3.9
Package Height (mm)
1.52
Seated Plane Height (mm)
1.68
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Jedec
MS-012AA
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
30V
Maximum Continuous Drain Current
10A
Material
Si
Maximum Drain Source Resistance
13@10VmOhm
Typical Gate Charge @ Vgs
64@10VnC
Typical Gate Charge @ 10V
64nC
Typical Input Capacitance @ Vds
2580@10VpF
Maximum Power Dissipation
1900mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Toshiba TPC8125 Datasheet
Download the complete datasheet for Toshiba TPC8125 to view detailed technical specifications.
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