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Technical Specifications
Toshiba TPC8129,LQ(S technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.65nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 22mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TPC8129,LQ(S Datasheet
Download the complete datasheet for Toshiba TPC8129,LQ(S to view detailed technical specifications.
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