N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 3.8A continuous drain current. This dual dual drain transistor is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads for surface mounting. Key specifications include a maximum drain-source on-resistance of 57 mOhm at 10V, typical gate charge of 11 nC at 10V, and typical input capacitance of 640 pF at 10V. The plastic package measures 5.5mm x 4.4mm x 1.5mm, suitable for PCB mounting with a 1.27mm pin pitch.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8218-H technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOP |
| Package Description | Plastic Small Outline Package |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.5(Max) |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 1.5 |
| Seated Plane Height (mm) | 1.6 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 3.8A |
| Material | Si |
| Maximum Drain Source Resistance | 57@10VmOhm |
| Typical Gate Charge @ Vgs | 11@10V|5.7@5VnC |
| Typical Gate Charge @ 10V | 11nC |
| Typical Input Capacitance @ Vds | 640@10VpF |
| Maximum Power Dissipation | 1500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba TPC8218-H Datasheet
Download the complete datasheet for Toshiba TPC8218-H to view detailed technical specifications.
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