N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 3.8A continuous drain current. This dual dual drain transistor is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads for surface mounting. Key specifications include a maximum drain-source on-resistance of 57 mOhm at 10V, typical gate charge of 11 nC at 10V, and typical input capacitance of 640 pF at 10V. The plastic package measures 5.5mm x 4.4mm x 1.5mm, suitable for PCB mounting with a 1.27mm pin pitch.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8218-H technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
3.8A
Material
Si
Maximum Drain Source Resistance
57@10VmOhm
Typical Gate Charge @ Vgs
11@10V|5.7@5VnC
Typical Gate Charge @ 10V
11nC
Typical Input Capacitance @ Vds
640@10VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba TPC8218-H Datasheet
Download the complete datasheet for Toshiba TPC8218-H to view detailed technical specifications.
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