N-channel enhancement mode power MOSFET, 30V drain-source voltage, 45A continuous drain current, and 2.2 mOhm maximum drain-source resistance at 10V. Features 113 nC typical gate charge and 4200 pF typical input capacitance. Housed in an 8-pin SOP Advance package with heat sink, measuring 5x5x0.95mm, suitable for surface mounting. Operating temperature range from -55°C to 150°C.
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Toshiba TPCA8026(TE12L,Q,M technical specifications.
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOP Advance |
| Package Description | Heat Sinked Small-Outline No Lead |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 5 |
| Package Height (mm) | 0.95 |
| Seated Plane Height (mm) | 0.95 |
| Pin Pitch (mm) | 1.27 |
| Package Weight (g) | 0.069 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 45A |
| Material | Si |
| Maximum Drain Source Resistance | 2.2@10VmOhm |
| Typical Gate Charge @ Vgs | 113@10VnC |
| Typical Gate Charge @ 10V | 113nC |
| Typical Input Capacitance @ Vds | 4200@10VpF |
| Maximum Power Dissipation | 2800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
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