The TPCC8065-H,LQ(S MOSFET features a maximum drain to source voltage of 30V and continuous drain current of 13A. It has a maximum power dissipation of 18W and operates within a temperature range of -55°C to 150°C. The device is packaged in a surface mount configuration and is available in quantities of 3000 per reel. The MOSFET has an input capacitance of 1.35nF and a maximum Rds on resistance of 11.4mR.
MountingSurface Mount
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Technical Specifications
Toshiba TPCC8065-H,LQ(S technical specifications.
General
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.35nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 18W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 11.4mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TPCC8065-H,LQ(S Datasheet
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