P-channel Power MOSFET, 30V Drain-Source Voltage, 18A Continuous Drain Current. Features 12mOhm maximum Drain-Source On-Resistance at 10V. Utilizes a Thin Small Outline No Lead, Exposed Pad (TSON EP Advance) package with 8 pins, measuring 3.1mm x 3.1mm x 0.85mm. Surface mountable with a 0.65mm pin pitch. Operates from -55°C to 150°C.
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Toshiba TPCC8103 technical specifications.
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | SON |
| Package/Case | TSON EP Advance |
| Package Description | Thin Small Outline No Lead, Exposed Pad |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.1 |
| Package Width (mm) | 3.1 |
| Package Height (mm) | 0.85 |
| Seated Plane Height (mm) | 0.85 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 18A |
| Material | Si |
| Maximum Drain Source Resistance | 12@10VmOhm |
| Typical Gate Charge @ Vgs | 38@10VnC |
| Typical Gate Charge @ 10V | 38nC |
| Typical Input Capacitance @ Vds | 1600@10VpF |
| Maximum Power Dissipation | 27000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
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