The Toshiba TPCC8103(TE12L,QM) is a 30V surface mount MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 27W and a maximum Rds On of 12mR. The device is packaged in a tape and reel format with a package quantity of one. It is not radiation hardened.
Sign in to ask questions about the Toshiba TPCC8103(TE12L,QM) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Toshiba TPCC8103(TE12L,QM) technical specifications.
| Continuous Drain Current (ID) | 18A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 68ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| Series | U-MOSV |
| RoHS | Not CompliantNo |
Download the complete datasheet for Toshiba TPCC8103(TE12L,QM) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
