The TPCF8003 is a single N-channel enhancement mode power MOSFET with a maximum drain source voltage of 20V and a maximum continuous drain current of 7A. It has a maximum power dissipation of 2500mW and is packaged in the VS package. The device is suitable for surface mount applications and has a minimum operating temperature of -55°C and a maximum operating temperature of 150°C.
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Toshiba TPCF8003 technical specifications.
| Package Family Name | VS |
| Package/Case | VS |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.5 |
| Package Height (mm) | 0.8 |
| Mounting | Surface Mount |
| Configuration | Single Hex Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 7A |
| Material | Si |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | 9.5@5VnC |
| Typical Input Capacitance @ Vds | 500@10VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
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