Toshiba TPCF8402(TE85L,F,M technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 72mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 470pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.35W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| RoHS | Compliant |
Download the complete datasheet for Toshiba TPCF8402(TE85L,F,M to view detailed technical specifications.
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