The TPCP8003-H(TE85L,F is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 2.2A and a drain to source breakdown voltage of 100V. The device features a drain to source resistance of 180mR and a maximum power dissipation of 1.68W. It is packaged in a lead-free SMD/SMT package and is suitable for use in high-temperature applications.
Toshiba TPCP8003-H(TE85L,F technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.8mm |
| Input Capacitance | 360pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.68W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.68W |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| Width | 2.4mm |
| RoHS | Compliant |
No datasheet is available for this part.
