NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 50V and a maximum DC collector current of 3A. This single-element transistor is housed in an 8-pin PS package with flat leads, measuring 2.9mm in length, 2.4mm in width, and 0.8mm in height, with a 0.65mm pin pitch. Maximum power dissipation is 1250mW, and it operates within a temperature range of -55°C to 150°C. Minimum DC current gain is 250 at 0.3A/2V and 120 at 1A/2V.
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Toshiba TPCP8511 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | PS |
| Package/Case | PS |
| Lead Shape | Flat |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 2.4 |
| Package Height (mm) | 0.8 |
| Seated Plane Height (mm) | 0.8 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | NPN |
| Configuration | Single Hex Collector |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 100V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 3A |
| Maximum Power Dissipation | 1250mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@2V|120@1A@2V |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
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