NPN Bipolar Junction Transistor, Dual Collector configuration, designed for surface mount applications. Features a 50V collector-emitter voltage, 3A maximum DC collector current, and 1770mW power dissipation. This silicon transistor offers a minimum DC current gain of 200 at 1A/2V. Housed in an 8-pin PS lead-frame SMT package with flat leads, measuring 2.9mm x 2.4mm x 0.8mm.
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Toshiba TPCP8701(TE85L,F,M technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | PS |
| Package/Case | PS |
| Lead Shape | Flat |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 2.4 |
| Package Height (mm) | 0.8 |
| Seated Plane Height (mm) | 0.8 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | NPN |
| Configuration | Dual Dual Collector |
| Number of Elements per Chip | 2 |
| Maximum Collector Base Voltage | 100V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 3A |
| Maximum Power Dissipation | 1770mW |
| Material | Si |
| Minimum DC Current Gain | 200@1A@2V|[email protected]@2V |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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