The TPCP8901 is a dual NPN/PNP bipolar junction transistor with a collector base voltage rating of 100V and a maximum collector current of 1A. It has a maximum power dissipation of 480mW and operates over a temperature range of -55°C to 150°C. The transistor is available in a surface mount package and is packaged in tape and reel quantities of 3000.
MountingSurface Mount
PolarityNPN, PNP
Power480mW
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Technical Specifications
Toshiba TPCP8901(TE85L,F,M technical specifications.
General
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 50V |
| Emitter Base Voltage (VEBO) | 7V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 480mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 480mW |
| Radiation Hardening | No |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TPCP8901(TE85L,F,M Datasheet
Download the complete datasheet for Toshiba TPCP8901(TE85L,F,M to view detailed technical specifications.
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