N-channel MOSFET, 200V drain-source voltage, 33A continuous drain current, and 29mΩ maximum Rds On. Features a SOP package for surface mounting, with a maximum power dissipation of 78W. Operates across a wide temperature range from -55°C to 150°C, offering fast switching with a 20ns turn-on delay and 12ns fall time.
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Toshiba TPH2900ENH,L1Q technical specifications.
| Package/Case | SOP |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.2nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 78W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 29mR |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 20ns |
| RoHS | Compliant |
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