This N-channel silicon power MOSFET is intended for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers. It is rated for 100 V drain-source voltage, ±20 V gate-source voltage, 170 A drain current, and 210 W power dissipation. The device uses the U-MOSⅨ-H process and provides up to 3.7 mΩ maximum drain-source on-resistance at 10 V gate drive, with 67 nC typical total gate charge and 4850 pF typical input capacitance. It is housed in an 8-pin surface-mount SOP Advance(N) package measuring 4.9 × 6.1 × 1.0 mm and supports channel temperatures up to 175 °C.
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Toshiba TPH3R70APL1 technical specifications.
| Polarity | N-ch |
| Application Scope | High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Drain Current | 170A |
| Power Dissipation | 210W |
| Channel Temperature | 175°C |
| Gate Threshold Voltage Min | 1.5V |
| Gate Threshold Voltage Max | 2.5V |
| Drain-Source On-Resistance Max @ VGS=4.5V | 6.2mΩ |
| Drain-Source On-Resistance Max @ VGS=10V | 3.7mΩ |
| Input Capacitance Typ | 4850pF |
| Total Gate Charge Typ | 67nC |
| Output Charge Typ | 74nC |
| Reverse Recovery Time Typ | 53ns |
| Reverse Recovery Charge Typ | 74nC |
| Mounting | Surface Mount |
| Package Pins | 8 |
| Package Dimensions | 4.9×6.1×1.0mm |
| RoHS | Yes |
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