This device is a silicon N-channel power MOSFET rated for 30 V drain-source voltage and 40 A drain current in a SOP Advance package. It is intended for high-efficiency DC-DC converters and switching voltage regulators. The datasheet summary specifies 4.9 mΩ typical drain-source on-resistance at 4.5 V gate drive and 3.9 nC typical switching charge. It also lists 10 µA maximum drain-source leakage current at 30 V and a threshold voltage range of 1.3 V to 2.3 V.
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Toshiba TPH4R003NL technical specifications.
| Transistor Polarity | N-Channel |
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 40A |
| Package Type | SOP Advance |
| Drain-Source On-Resistance | 4.9 typ @ VGS=4.5 VmΩ |
| Switching Charge | 3.9 typnC |
| Drain-Source Leakage Current | 10 max @ VDS=30 VµA |
| Threshold Voltage | 1.3 to 2.3V |
