This N-channel power MOSFET is rated for 100 V drain-source voltage and 138 A drain current. It uses Toshiba's U-MOSⅧ-H process and is housed in an 8-pin surface-mount SOP Advance(N) package measuring 4.9 × 6.1 × 1.0 mm. Maximum drain-source on-resistance is 4.5 mΩ at 10 V gate drive, with typical total gate charge of 58 nC and input capacitance of 4000 pF. The device is intended for DC-DC converters, switching voltage regulators, and motor drivers, and the listed orderable part number is RoHS compliant.
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Toshiba TPH4R50ANH1 technical specifications.
| Application Scope | DC-DC Converters / Switching Voltage Regulators / Motor Drivers |
| Polarity | N-ch |
| Generation | U-MOSⅧ-H |
| Internal Connection | Single |
| Package Pins | 8 |
| Mounting | Surface Mount |
| Package Dimensions | 4.9 × 6.1 × 1.0mm |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Drain Current | 138A |
| Power Dissipation | 170W |
| Gate Threshold Voltage Min | 2.0V |
| Gate Threshold Voltage Max | 4.0V |
| Drain-Source On-Resistance Max | 4.5mΩ |
| Input Capacitance Typ | 4000pF |
| Total Gate Charge Typ | 58nC |
| Output Charge Typ | 79nC |
| Reverse Recovery Time Typ | 63ns |
| Reverse Recovery Charge Typ | 104nC |
| RoHS | Yes |
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