Toshiba
TPM1919-60
TRANSISTOR L BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G6A, 2 PIN, FET RF Power
TRANSISTOR L BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G6A, 2 PIN, FET RF Power
MountingScrew
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Technical Specifications
Toshiba TPM1919-60 technical specifications.
General
| Continuous Drain Current (ID) | 26A |
| Gate to Source Voltage (Vgs) | -5V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Mount | Screw |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Toshiba TPM1919-60 Datasheet
Download the complete datasheet for Toshiba TPM1919-60 to view detailed technical specifications.
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