This device is a silicon N-channel power MOSFET based on Toshiba U-MOS-H technology. It is rated for 150 V drain-source voltage and 18 A continuous drain current, with a typical drain-source on-resistance of 39 mΩ at 10 V gate drive. The device is intended for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers. It is supplied in the TSON Advance package and supports a maximum channel temperature of 175 °C.
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Toshiba TPN4800CQH technical specifications.
| Channel Type | N-channel |
| Technology | U-MOS-H |
| Drain-Source Voltage | 150V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 18A |
| Pulsed Drain Current | 56A |
| Power Dissipation | 86W |
| Single-Pulse Avalanche Energy | 14mJ |
| Channel Temperature | 175°C |
| Gate Threshold Voltage | 3.3 to 4.3V |
| Drain-Source On-Resistance | 39 typ @ VGS=10 V, ID=9 AmΩ |
| Drain-Source On-Resistance | 42 typ @ VGS=8 V, ID=9 AmΩ |
| Input Capacitance | 800 typpF |
| Output Capacitance | 170 typpF |
| Reverse Transfer Capacitance | 8 typpF |
| Total Gate Charge | 11 typnC |
| Gate-Drain Charge | 1.9 typnC |
| Gate Switch Charge | 3.3 typnC |
| Output Charge | 21 typnC |
| Reverse Recovery Time | 58 typns |
| Reverse Recovery Charge | 74 typnC |
| Package Weight | 0.026 typg |
