NPN silicon phototransistor chip, 2-pin TO-18 package, designed for through-hole mounting. Features a peak wavelength sensitivity of 800 nm and a maximum light current of 600 µA. Operates within a temperature range of -40 °C to 125 °C, with a maximum collector current of 50 mA and a maximum power dissipation of 150 mW. Includes a domed lens for top-view viewing orientation and a half-intensity angle of 20°.
PackageTO-18
MountingThrough Hole
PolarityNPN
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Technical Specifications
Toshiba TPS601A (B,F) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-206-AA
Package/Case
TO-18
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
2
PCB
2
Package Height (mm)
6.5
Package Diameter (mm)
5.8(Max)
Package Material
Metal
Mounting
Through Hole
Phototransistor Type
Phototransistor
Type
Chip
Polarity
NPN
Half Intensity Angle Degrees
20°
Min Operating Temperature
-40°C
Max Operating Temperature
125°C
Viewing Orientation
Top View
Peak Wavelength
800nm
Maximum Light Current
600uA
Lens Shape Type
Domed
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
Maximum Emitter-Collector Voltage
5V
Maximum Collector-Emitter Voltage
40V
Maximum Dark Current
200nA
Maximum Collector Current
50mA
Maximum Collector-Emitter Saturation Voltage
0.4V
Maximum Fall Time
2000(Typ)ns
Maximum Power Dissipation
150mW
Maximum Rise Time
2000(Typ)ns
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541407080
Schedule B
8541407080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba TPS601A (B,F) Datasheet
Download the complete datasheet for Toshiba TPS601A (B,F) to view detailed technical specifications.
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