NPN silicon phototransistor chip, 2-pin TO-18 package, designed for through-hole mounting. Features a peak wavelength sensitivity of 800 nm and a maximum light current of 600 µA. Operates within a temperature range of -40 °C to 125 °C, with a maximum collector current of 50 mA and a maximum power dissipation of 150 mW. Includes a domed lens for top-view viewing orientation and a half-intensity angle of 20°.
PackageTO-18
MountingThrough Hole
PolarityNPN
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Technical Specifications
Toshiba TPS601A (B,F) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-206-AA |
| Package/Case | TO-18 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 2 |
| PCB | 2 |
| Package Height (mm) | 6.5 |
| Package Diameter (mm) | 5.8(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Phototransistor Type | Phototransistor |
| Type | Chip |
| Polarity | NPN |
| Half Intensity Angle Degrees | 20° |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 125°C |
| Viewing Orientation | Top View |
| Peak Wavelength | 800nm |
| Maximum Light Current | 600uA |
| Lens Shape Type | Domed |
| Number of Channels per Chip | 1 |
| Fabrication Technology | NPN Transistor |
| Maximum Emitter-Collector Voltage | 5V |
| Maximum Collector-Emitter Voltage | 40V |
| Maximum Dark Current | 200nA |
| Maximum Collector Current | 50mA |
| Maximum Collector-Emitter Saturation Voltage | 0.4V |
| Maximum Fall Time | 2000(Typ)ns |
| Maximum Power Dissipation | 150mW |
| Maximum Rise Time | 2000(Typ)ns |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541407080 |
| Schedule B | 8541407080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba TPS601A (B,F) Datasheet
Download the complete datasheet for Toshiba TPS601A (B,F) to view detailed technical specifications.
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