The ULN2004AFWG is a surface mount NPN bipolar junction transistor with a collector emitter breakdown voltage of 50V and saturation voltage of 1.6V. It can handle a maximum collector current of 500mA and has a maximum power dissipation of 1.2W. The transistor is packaged in a lead-free, plastic SOIC-16 package and is RoHS compliant. It operates within a temperature range of -40°C to 85°C.
PackageSOIC
Voltage30V
MountingSurface Mount
PolarityNPN
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Technical Specifications
Toshiba ULN2004AFWG technical specifications.
General
| Package/Case | SOIC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 1.6V |
| Height | 1.47mm |
| Length | 9.91mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.2W |
| Mount | Surface Mount |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Voltage | 30V |
| Width | 3.94mm |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba ULN2004AFWG Datasheet
Download the complete datasheet for Toshiba ULN2004AFWG to view detailed technical specifications.
No datasheet is available for this part.
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