The ULN2004APG(C,N,HZN is a high-power NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It is packaged in a DIP package and is designed for through-hole mounting. The transistor has a high current gain of 1000 and a maximum power dissipation of 1.47W. It operates within a temperature range of -40°C to 85°C.
PackageDIP
MountingThrough Hole
PolarityNPN
Power1.47W
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Technical Specifications
Toshiba ULN2004APG(C,N,HZN technical specifications.
General
| Package/Case | DIP |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 1.6V |
| Continuous Collector Current | 500mA |
| hFE Min | 1000 |
| Max Collector Current | 500mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.47W |
| Mount | Through Hole |
| Output Type | TTL |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.47W |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba ULN2004APG(C,N,HZN Datasheet
Download the complete datasheet for Toshiba ULN2004APG(C,N,HZN to view detailed technical specifications.
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